1. M. M. Ahmed, S. A. Moiz, Kh. S. Karimov and Z. M. Karieva “The Photo-Electrical Behavior Of n-GaAs/Orange Dye, Vinyl-Ethynyl-Thrimethyl-Piperidole/Conductive Glass Sensor”, accepted in Thin Solid Films (2007).
2. S. A. Moiz, M. M. Ahmed, Kh. S. Karimov and M. Mehmood, “Temperature Dependent I-V Characteristics of Poly-N-Epoxypropyl Carbazole Complex,” Thin Solid Films, Vol. 516, pp: 72-77 (2007)
3. N. M. Memon, M. M. Ahmed, and F. Rehman, “A Comprehensive Four Parameters I-V Model for GaAs MESFET Output Characteristics,” Solid State Electronics, vol. 516, pp 72-77 (2007)
4. F. U. Rehman. M. M. Ahmed and N. Ahmed, “Steering Control Algorithm for Drift Free Control Systems Using Model Decomposition; A Wheeled Mobile Robot of Type (1,1) Example,” Accepted in International Journal of Robotics and Automation (2007).
5. Fazal-ur-Rehman and M. M. Ahmed, “Steering Control Algorithm for a Class of Wheeled Mobile Robots,” IEE Proceedings in Control Theory and Applications, vol. 1, No. 4, pp 115-124 (2007)
6. Kh. S. Karimov, M. H. Sayyad, Mukhtar Ali, M. N. Khan, S. A. Moiz, “Electrochemical Properties of Zn/Orange Dye aqueous solution/ Carbon Cell”, Journal of Power Sources, Vol. 155, pp: 475-477 (2006)
7. S. A. Moiz, M. M. Ahmed and Kh. S. Karimov, “Effect Of Temperature and Humidity on Electrical Properties of Organic Semiconductor Orange Dye Films Deposited From Solution,” Japanese Journal of Applied Physics, vol. 44, No. 3 pp 1199-1203 (2005).
8. Y. Zafar and M. M. Ahmed, “A Novel FPGA Compliant Micropipeline,” IEEE Trans. on Circuits and Systems-II, vol. 52, No. 5, pp 611-615 (2005).
9. Kh. S. Karimov, M. M. Ahmed, S. A. Moiz and M. I. Fedorov, “Temperature Dependent Properties of Organic-On-Inorganic Ag/p-CuPc/n-GaAs/Ag Photoelectric Cell,” Solar Energy Materials & Solar Cells, vol. 87 pp 61-75 (2005)
10. S. A. Moiz, M. M. Ahmed and Kh. S. Karimov, “Estimation of Electrical Parameters of OD Organic Semiconductor Diode from Measured I-V Characteristics,” ETRI Journal vol. 27 (3) pp 319-325 (2005)
11. Kh. S. Karimov, P. Akhter, M. M. Ahmed, J. A. Chattha, M. A. Saqib, S. A. Yousafzai, “A Simple Photo-Voltaic Tracking System,” Solar Energy Materials & Solar Cells, vol. 87 pp 49-59 (2005)
12. M. M. Ahmed, Kh. S. Karimov and S. A. Moiz,. “Temperature Dependent I-V Characteristics of Organic-Inorganic Heterojunction Diodes,” IEEE Trans. on Electron Devices vol. 51(1) pp 121-126 (2004)
13. M. A. Saqib, Kh. S. Karimov, M. M. Ahmed and M. A. Turaeva, “Design, Implementation and Analysis of a New Topology of a Boost DC-DC Voltage Converter”, Applied and Computational Mathematics vol.3, N1, (2004)
14. Kh. S. Karimov, M. H. Sayyad, M. M. Ahmed, M. N. Khan, Z. M. Karieva, S. A. Moiz, M. Shah, Kh. Zakaullah and M. A. Turaeva, “Effect of Temperature and Humidity on Electrical Properties of Organic Orange Dye Complex Films,” Eurasian Chemico-Technological Journal, vol. 6, No. 2, pp 145-149 (2004)
15. M. M. Ahmed, “An Improved Method to Estimate Intrinsic Small Signal Parameters of a GaAs MESFET from Measured DC Characteristics,” IEEE Trans. on Electron Devices vol. 50(10), pp 2196-2202 (2003)
16. Kh. S. Karimov, M. M. Ahmed, S. A. Moiz, P. Babadzhanov, R. Marupov and M. A. Turaeva, “Electric Properties of  OND Processed at High Gravity,” Eurasian Chemico-Technological Journal, vol. 5, No. 2, pp 109-113 (2003)
17. M. M. Ahmed, “Schottky Barrier Depletion Modification¾A Source of Output Conductance in Submicron GaAs MESFET's,” IEEE Trans. Electron Devices, vol. 48(4), pp 830-834 (2001)
18. M. M. Ahmed, “Optimization of Active Channel Thickness of mm-Wavelength GaAs MESFET’s by Using a Non-Linear I-V Model,” IEEE Trans. Electron Devices, vol. 47(2), pp 299-303 (2000)
19. M. M. Ahmed, “Effects of Active Channel Thickness on Submicron GaAs Metal Semiconductor Field-Effect Characteristics,” J. Vac. Sci. Technol. B 16(3) pp 968-971 (1998)
20. M. M. Ahmed, “Effects of Sintering on Au/Ti/GaAs Schottky Barrier in Submicron GaAs MESFETs,” J. Vac. Sci. Technol. B 16(4), pp 2034-2037 (1998)
21. M. M. Ahmed, “Abrupt Negative Differential Resistance in Ungated GaAs FETs,” IEEE Trans. Electron Device, vol. 44(11), pp 2031-2033 (1997)
22. M. M. Ahmed, H. Ahmed, P. H. Ladbrooke, “An Improved dc Model for Circuit Analysis Programs for Submicron GaAs MESFETs,” IEEE Trans. Electron Devices, vol. 44(3), pp 360-363 (1997)
23. M. M. Ahmed, “Compression in Transconductance at Low Gate Voltage in submicron GaAs MESFETs,” J. Vac. Sci. Technol. B 15 (6), pp 2052-2056 (1997)
24. M. M. Ahmed, H. Ahmed, “A Novel Electron Beam Lithography Technique for Submicron T-gate Fabrication,” J. Vac. Sci. Technol. B 15 (2) pp 306-310 (1997)
25. M. M. Ahmed, H. Ahmed, P. H. Ladbrooke, “Effects of Interface States on Submicron GaAs Metal-Semiconductor Field-Effect Transistors Assessed by Gate Leakage Current,” J. Vac. Sci. Technol. B 13 (4) pp 1519-1525 (1995)
26. F. Mahmood, H. Ahmed, M. Suleman and M. M. Ahmed, “Measurements of the Activation Energy of Tantalum Silicide Growth on Silicon by Rapid Electron Beam Annealing,” Japanese Journal of Applied Physics, vol. 30, pp 1418-1421 (1991)